一种具有增强线性度的非对称体改性复合MOS晶体管

A. Arnaud, Rafael Puyol, A. Chacón-Rodríguez, M. Miguez, J. Gak
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引用次数: 1

摘要

在这项工作中,提出了一种非对称体线性化的复合MOSFET,即使在弱反转中也具有增强的线性范围和高达数百mV的等效饱和电压,从而可以实现大型MOS电阻。给出了一些初步的测量结果,以及150MΩ和200MΩ等效电阻的模拟,线性范围高达1.5V。一个低频,40dB增益,完全集成的心脏传感通道滤波器/放大器也显示。利用所提出的技术,电路仅消耗25nA的电源电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.
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