{"title":"瞬变电磁法在微电子领域的最新应用进展","authors":"T. Sheng, C. Tung, J.L.F. Wang","doi":"10.1109/ICSICT.1998.785884","DOIUrl":null,"url":null,"abstract":"Transmission electron microscopy (TEM) has played an important role in silicon VLSI/ULSI process evaluation and failure analysis. More recently, it has also been applied to micro-electro-machine system (MEMS), MCM, ...etc. In this talk, a few recent TEM application developments are presented. Some of these TEM applications may seem very difficult or impossible previously. These new applications are made possible by innovative sample preparation break through.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The recent TEM application development for microelectronics\",\"authors\":\"T. Sheng, C. Tung, J.L.F. Wang\",\"doi\":\"10.1109/ICSICT.1998.785884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transmission electron microscopy (TEM) has played an important role in silicon VLSI/ULSI process evaluation and failure analysis. More recently, it has also been applied to micro-electro-machine system (MEMS), MCM, ...etc. In this talk, a few recent TEM application developments are presented. Some of these TEM applications may seem very difficult or impossible previously. These new applications are made possible by innovative sample preparation break through.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The recent TEM application development for microelectronics
Transmission electron microscopy (TEM) has played an important role in silicon VLSI/ULSI process evaluation and failure analysis. More recently, it has also been applied to micro-electro-machine system (MEMS), MCM, ...etc. In this talk, a few recent TEM application developments are presented. Some of these TEM applications may seem very difficult or impossible previously. These new applications are made possible by innovative sample preparation break through.