{"title":"化学浴在室温下沉积Zn(S, OH, O)薄膜:物理化学考虑","authors":"I. González-Chan, A. Oliva","doi":"10.1109/ICEEE.2016.7751191","DOIUrl":null,"url":null,"abstract":"A physicochemical analysis on the chemical bath solution for Zn(S,OH,O) thin films deposition is discussed in this work. The effect of three temperatures closed to the ambient (25, 40 and 55 °C) and three HS-/Zn(OH)42- ion concentration ratios (1, 1.5 and 2) on the growth and physical properties of the deposited ZnS was investigated. The species distribution diagrams and solubility curves obtained at these conditions are the key for determining the best conditions. Thus, conditions for obtaining high quality ZnS films by chemical bath deposition technique are reported. ZnS films with high transmittance (80-90%) and band gap energy of 3.68 eV were obtained at selected physicochemical conditions.","PeriodicalId":285464,"journal":{"name":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Chemical bath deposited Zn(S, OH, O) films near room temperature: Physicochemical considerations\",\"authors\":\"I. González-Chan, A. Oliva\",\"doi\":\"10.1109/ICEEE.2016.7751191\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physicochemical analysis on the chemical bath solution for Zn(S,OH,O) thin films deposition is discussed in this work. The effect of three temperatures closed to the ambient (25, 40 and 55 °C) and three HS-/Zn(OH)42- ion concentration ratios (1, 1.5 and 2) on the growth and physical properties of the deposited ZnS was investigated. The species distribution diagrams and solubility curves obtained at these conditions are the key for determining the best conditions. Thus, conditions for obtaining high quality ZnS films by chemical bath deposition technique are reported. ZnS films with high transmittance (80-90%) and band gap energy of 3.68 eV were obtained at selected physicochemical conditions.\",\"PeriodicalId\":285464,\"journal\":{\"name\":\"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEE.2016.7751191\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE.2016.7751191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chemical bath deposited Zn(S, OH, O) films near room temperature: Physicochemical considerations
A physicochemical analysis on the chemical bath solution for Zn(S,OH,O) thin films deposition is discussed in this work. The effect of three temperatures closed to the ambient (25, 40 and 55 °C) and three HS-/Zn(OH)42- ion concentration ratios (1, 1.5 and 2) on the growth and physical properties of the deposited ZnS was investigated. The species distribution diagrams and solubility curves obtained at these conditions are the key for determining the best conditions. Thus, conditions for obtaining high quality ZnS films by chemical bath deposition technique are reported. ZnS films with high transmittance (80-90%) and band gap energy of 3.68 eV were obtained at selected physicochemical conditions.
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