用于0.35 μm BiCMOS技术的7 cell Si-Drift检测器的混合信号读出芯片

I. Diehl, K. Hansen, C. Reckleben
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引用次数: 3

摘要

介绍了一种采用0.35 μ m BiCMOS技术的混合信号七通道ASIC,用于x射线光谱中硅漂移探测器的读出。可以实现每秒超过400万个脉冲的积分计数率。计数率和光子能量相关的输入脉冲形状变化由基线保持电路补偿,其中基线不稳定性保持在1%以下。在1.9 mV ~ 7.2 mV的输入动态范围内,可以达到1%以下的非线性。等效输入噪声电压为31 muVrms。在最大输出电压下,测量到的通道间串扰约为0.3%。读出芯片的功耗为每通道约15mw。给出了主要电路模块的功能和实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A mixed-signal readout chip for a 7-cell Si-Drift detector in 0.35-μm BiCMOS technology
This paper describes a mixed-signal seven-channel ASIC in 0.35-mum BiCMOS technology for the readout of Si-drift detectors used in X-ray spectroscopy. An integral count rate of more than four million pulses per second can be achieved. Count rate- and photon energy-related changes of the input pulse shape are compensated by a baseline-holding circuit, where the baseline instability remains below 1%. Within an input dynamic range between 1.9 mV and 7.2 mV a non-linearity below 1% can be reached. The equivalent input-noise voltage amounts to 31 muVrms. At maximum output voltage a channel-to-channel crosstalk of ~0.3% was measured. The power consumption of the readout chip is ~15 mW per channel. The functionalities of the main circuit blocks as well as experimental results are presented.
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