一种高效率ka波段MMIC功率放大器的功率HEMT生产工艺

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394438

M. Biedenbender, J. Lee, K. Tan, P. Liu, A. Freudenthal, D. Streit, G. Luong, R. Lai, M. Aust, B. Allen, T. Lin, H. Yen

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引用次数: 23

摘要

作者开发了一种基于伪晶AlGaAs/InGaAs/GaAs HEMT的可重复、高产率和高性能功率HEMT ka波段MMIC生产工艺。详细介绍了60片晶圆的制作工艺和ka波段MMIC功率放大器的性能。在器件和mmic上都实现了最先进的功率性能。具有400 /spl mu/m器件的单级mmic在37 GHz时的输出功率为240 mW (0.6 W/mm)，功率增益为7.8 dB，功率附加效率为40%。该ka波段MMIC功率放大器的输出功率为1.3 W，增益为9 dB，功率附加效率为24%。此外，功率MMIC HEMT工艺显示RF MMIC电路良率为25.8%，来自60片晶圆的总共6936个可能的芯片

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A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers

The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<>

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15th Annual GaAs IC Symposium

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