{"title":"硅开孔过程的数值研究","authors":"B. Davaji, M. Fathipour, M. Vadizadeh","doi":"10.1109/ASQED.2009.5206236","DOIUrl":null,"url":null,"abstract":"In this paper we review the operational principles of silicon opening switch (SOS) process the utilizing realistic physical models provided by a commercial TCAD tool. We discuses qualitatively the difference between silicon opening process and conventional junction recovery mode. We show that p-n junction has no effect on current interruption.","PeriodicalId":437303,"journal":{"name":"2009 1st Asia Symposium on Quality Electronic Design","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A numerical study of silicon opening process\",\"authors\":\"B. Davaji, M. Fathipour, M. Vadizadeh\",\"doi\":\"10.1109/ASQED.2009.5206236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we review the operational principles of silicon opening switch (SOS) process the utilizing realistic physical models provided by a commercial TCAD tool. We discuses qualitatively the difference between silicon opening process and conventional junction recovery mode. We show that p-n junction has no effect on current interruption.\",\"PeriodicalId\":437303,\"journal\":{\"name\":\"2009 1st Asia Symposium on Quality Electronic Design\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 1st Asia Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASQED.2009.5206236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 1st Asia Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASQED.2009.5206236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we review the operational principles of silicon opening switch (SOS) process the utilizing realistic physical models provided by a commercial TCAD tool. We discuses qualitatively the difference between silicon opening process and conventional junction recovery mode. We show that p-n junction has no effect on current interruption.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
