用于改进红外传感的低温Si/SiGe冲击二极管

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367847

J. Meteer, S. Eikenberry, J. Huffman, E. Kan

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引用次数: 0

摘要

Si/SiGe量子阱(QW)冲击二极管在10-150 K之间的10 V反向偏置下倍增高达200。这些二极管是用于Si杂质带导(IBC)红外探测器的理想增益结构，由于可用的集成平台，适当的低温特性，低电压工作和低噪声倍增机制，以兼容中红外和远红外探测。物理表征，包括成分和掺杂谱，通过STEM和SIMS分析获得。通过测量光电流倍增来验证我们的器件设计。

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A low-temperature Si/SiGe impact diode for improved infrared sensing

Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far infrared detection. Physical characterization, including composition and doping profiles, are obtained from STEM and SIMS analyses. Photocurrent multiplication is measured to confirm our device design.

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来源期刊

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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