{"title":"热载流子应力nMOSFET中捕获电荷的反演模型","authors":"R. Duane, A. Concannon, D. McCarthy, A. Mathewson","doi":"10.1109/ESSDERC.2000.194791","DOIUrl":null,"url":null,"abstract":"A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET\",\"authors\":\"R. Duane, A. Concannon, D. McCarthy, A. Mathewson\",\"doi\":\"10.1109/ESSDERC.2000.194791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194791\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET
A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.
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