{"title":"基于0.13μm CMOS的紧凑5GHz增q驻波谐振器滤波器","authors":"D. Shi, M. Flynn","doi":"10.1109/RFIC.2008.4561475","DOIUrl":null,"url":null,"abstract":"A fully-integrated 5 GHz bandpass filter with 0 dB IL and 3 dB bandwidth of 9.5% (1 dB bandwidth of 6%) is reported. The filter employs novel on-chip capacitively-loaded, transmission-line standing-wave resonators and Q-enhancement circuits. A prototype 5 GHz on-chip filter, implemented in 0.13 mum CMOS, dissipates 2.88 mW from a 1.2 V supply, and occupies a die area of 0.3 mm2.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A compact 5GHz Q-enhanced standing-wave resonator-based filter in 0.13μm CMOS\",\"authors\":\"D. Shi, M. Flynn\",\"doi\":\"10.1109/RFIC.2008.4561475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully-integrated 5 GHz bandpass filter with 0 dB IL and 3 dB bandwidth of 9.5% (1 dB bandwidth of 6%) is reported. The filter employs novel on-chip capacitively-loaded, transmission-line standing-wave resonators and Q-enhancement circuits. A prototype 5 GHz on-chip filter, implemented in 0.13 mum CMOS, dissipates 2.88 mW from a 1.2 V supply, and occupies a die area of 0.3 mm2.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
报道了一种完全集成的5ghz带通滤波器，其0 dB IL和3db带宽为9.5% (1db带宽为6%)。该滤波器采用新颖的片上电容负载、在线传输驻波谐振器和q增强电路。一个原型5 GHz片上滤波器，在0.13 μ m CMOS中实现，从1.2 V电源耗散2.88 mW，占用0.3 mm2的芯片面积。
A compact 5GHz Q-enhanced standing-wave resonator-based filter in 0.13μm CMOS
A fully-integrated 5 GHz bandpass filter with 0 dB IL and 3 dB bandwidth of 9.5% (1 dB bandwidth of 6%) is reported. The filter employs novel on-chip capacitively-loaded, transmission-line standing-wave resonators and Q-enhancement circuits. A prototype 5 GHz on-chip filter, implemented in 0.13 mum CMOS, dissipates 2.88 mW from a 1.2 V supply, and occupies a die area of 0.3 mm2.
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