{"title":"无电感，10Gbps跨阻抗放大器在低电源电压下工作","authors":"Soorena Zohoori, Mehdi Dolatsahi","doi":"10.1109/IRANIANCEE.2017.7985308","DOIUrl":null,"url":null,"abstract":"In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC) and a wide-swing cascode (WSC) structure. The focus in this work is to design a full-transistor structure which can operate at a low-supply voltage and high speed applications. Simulation results using 90nm CMOS technology parameters in HSPICE shows 48dBΩ trans-impedance gain, 7GHz bandwidth, 10mW power consumption for 0.8 supply voltage and 2.1µArms (or 25.1pA/√Hz) input referred noise.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"An inductor-less, 10Gbps trans-impedance amplifier operating at low supply-voltage\",\"authors\":\"Soorena Zohoori, Mehdi Dolatsahi\",\"doi\":\"10.1109/IRANIANCEE.2017.7985308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC) and a wide-swing cascode (WSC) structure. The focus in this work is to design a full-transistor structure which can operate at a low-supply voltage and high speed applications. Simulation results using 90nm CMOS technology parameters in HSPICE shows 48dBΩ trans-impedance gain, 7GHz bandwidth, 10mW power consumption for 0.8 supply voltage and 2.1µArms (or 25.1pA/√Hz) input referred noise.\",\"PeriodicalId\":161929,\"journal\":{\"name\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2017.7985308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2017.7985308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An inductor-less, 10Gbps trans-impedance amplifier operating at low supply-voltage
In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC) and a wide-swing cascode (WSC) structure. The focus in this work is to design a full-transistor structure which can operate at a low-supply voltage and high speed applications. Simulation results using 90nm CMOS technology parameters in HSPICE shows 48dBΩ trans-impedance gain, 7GHz bandwidth, 10mW power consumption for 0.8 supply voltage and 2.1µArms (or 25.1pA/√Hz) input referred noise.
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