抗EMI LDO稳压器，集成电流监视器

2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2013-12-01 DOI:10.1109/EMCCOMPO.2013.6735182

Philipp Schroeter, S. Jahn, F. Klotz, Fabio Ballarin, F. Gini, M. Piselli

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引用次数: 2

摘要

本文介绍了一种集成电流监测器的低差(LDO)稳压器，它在射频抗扰度方面设定了新的性能基准。与经典拓扑结构相比，所提出的电路对叠加在稳压器电池电压(VS)引脚和输出(OUT)引脚中的射频干扰具有非常高的鲁棒性。所提出的电路是使用HV-BiCMOS技术设计的，用于汽车应用。详细解释了电路原理，并通过射频抗扰度测量验证了该方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EMI resisting LDO voltage regulator with integrated current monitor

This paper introduces a low dropout (LDO) voltage regulator with an integrated current monitor, which sets a new performance benchmark in terms of RF immunity. Compared to classic topologies the proposed circuit succeeds in a very high robustness against RF disturbances which are superimposed into the regulator's battery voltage (VS) pin and output (OUT) pin. The proposed circuit was designed using a HV-BiCMOS technology for automotive applications. Circuit theory is explained in detail and the proposed approach is confirmed by RF immunity measurements.

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2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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