SIMULATION OF THE TEMPERATURE DEPENDENCE OF THE QUANTUM OSCILLATIONS’ EFFECTS IN 2D SEMICONDUCTOR MATERIALS

For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a parabolic dispersion law. A mathematical expression is derived for calculating the dependence o f the distribution o f the Fermi-Dirac function on the magnetic field, on the thickness o f the quantum well and on the temperature in low-dimensional semiconductor materials. The possibility o f calculating the Fermi energy oscillations in two-dimensional electron gases at high temperatures and weak magnetic fields is shown for the first time. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.