S. Takagi, Tatsuhiro Nakaegawa, S. Hsiao, M. Sekine
{"title":"基于遗传算法和等离子体仿真的双频电容耦合等离子体装置射频频率优化","authors":"S. Takagi, Tatsuhiro Nakaegawa, S. Hsiao, M. Sekine","doi":"10.1109/ISSM55802.2022.10026920","DOIUrl":null,"url":null,"abstract":"As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, plasma conditions with high plasma density and small variations in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 0.5 to 4.0 MHz for the low-frequency generator.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of RF Frequencies in Dual-frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation\",\"authors\":\"S. Takagi, Tatsuhiro Nakaegawa, S. Hsiao, M. Sekine\",\"doi\":\"10.1109/ISSM55802.2022.10026920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, plasma conditions with high plasma density and small variations in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 0.5 to 4.0 MHz for the low-frequency generator.\",\"PeriodicalId\":130513,\"journal\":{\"name\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM55802.2022.10026920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10026920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of RF Frequencies in Dual-frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation
As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, plasma conditions with high plasma density and small variations in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 0.5 to 4.0 MHz for the low-frequency generator.