0.53 ga0.47 as Esaki隧道二极管创纪录峰值电流密度对隧道场效应管逻辑应用的影响

D. Mohata, D. Pawlik, L. Liu, S. Mookerjea, V. Saripalli, S. Rommel, S. Datta
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引用次数: 8

摘要

带间隧道场效应晶体管(tfet)由于能够消除MOSFET中60mV/dec的亚阈值斜率(STS)限制,最近获得了很多兴趣。这可以在降低的栅极电压范围内产生更高的离子- ioff比,从而预测tfet更适合低电源电压(VDD≤0.5V)工作。与Si和Ge不同,In0.53Ga0.47As等III-V半导体具有更小的隧穿势垒和隧穿质量,因此使其成为消除tfet中驱动电流(ION)限制的设计选择[1-2]。在这项工作中,(i)我们展示了使用MBE生长原位掺杂外延层形成的0.53 ga0.47 as Esaki隧道二极管的创纪录峰值电流密度(JPEAK)的实验演示[4]。(ii)使用Sentaurus器件模拟器[3]中的非局部隧道模型,对测量的电流-电压特性(J-V)进行建模,并对模型参数进行校准。(iii)采用校准的非局部隧道模型,讨论了新型的In0.53Ga0.47As超薄体(7nm)-双栅极tfet (UTB-DG-TFET)设计,以增强I{ON}。(iv)给出了新型In0.53Ga0.47As TFET逆变器在0.5V电源电压下的脉冲瞬态响应,并与Si基MOSFET逆变器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications
Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher ION-IOFF ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD ≤ 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0.47As have smaller tunneling barrier and tunnelling mass, thus making them a design choice to eliminate drive current (ION) limitations in TFETs [1–2]. In this work, (i) we present the experimental demonstration of record peak current density (JPEAK) In0.53Ga0.47As Esaki tunnel diode, formed using MBE grown in-situ doped epitaxial layers [4]. (ii) Using a non-local tunneling model in Sentaurus device simulator [3], the measured current-voltage characteristics (J-V) is modeled and the model parameters are calibrated. (iii) Novel In0.53Ga0.47As ultra thin body (7nm)-double gate-TFET (UTB-DG-TFET) design to boost I{ON} is discussed using the calibrated non-local tunneling model. (iv) Pulse transient response of the novel In0.53Ga0.47As TFET inverter is presented and compared with Si based MOSFET inverters at a supply voltage of 0.5V.
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