{"title":"LEC-SI GaAs和Fe-InP的光反射率表征","authors":"H. Bhimnathwala, J. Borrego","doi":"10.1109/SIM.1992.752713","DOIUrl":null,"url":null,"abstract":"The amplitude dependence of the photoreflectance signal upon intensity of the pumping beam has been measured for SI-GaAs and SI-InP and it is explained by the difference in the surface Fermi level in the two materials. When a pump beam with photon energy less than the bandgap is used in SI-GaAs a simple relationship exists between the amplitude of the photoreflectance signal and the trapped surface charge. The effect of several chemical treatments or of a ZnSe cap layer on the surface trap density in SI-GaAs has been determined.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoreftectance characterization of LEC-SI GaAs and Fe-InP\",\"authors\":\"H. Bhimnathwala, J. Borrego\",\"doi\":\"10.1109/SIM.1992.752713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The amplitude dependence of the photoreflectance signal upon intensity of the pumping beam has been measured for SI-GaAs and SI-InP and it is explained by the difference in the surface Fermi level in the two materials. When a pump beam with photon energy less than the bandgap is used in SI-GaAs a simple relationship exists between the amplitude of the photoreflectance signal and the trapped surface charge. The effect of several chemical treatments or of a ZnSe cap layer on the surface trap density in SI-GaAs has been determined.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoreftectance characterization of LEC-SI GaAs and Fe-InP
The amplitude dependence of the photoreflectance signal upon intensity of the pumping beam has been measured for SI-GaAs and SI-InP and it is explained by the difference in the surface Fermi level in the two materials. When a pump beam with photon energy less than the bandgap is used in SI-GaAs a simple relationship exists between the amplitude of the photoreflectance signal and the trapped surface charge. The effect of several chemical treatments or of a ZnSe cap layer on the surface trap density in SI-GaAs has been determined.
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