POWER8™(P8)服务器类处理器的物理设计和实现

Mozammel Hossain, E. Fluhr, A. Hall, V. Agarwal
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引用次数: 1

摘要

POWER8™(P8)处理器是一款采用IBM 22nm SOI技术制造的12核649mm2 4.2B晶体管芯片,在大数据应用和节能计算的驱动下,其插座性能比其32nm前身POWER7+提高2.5倍。高度分布式的片式稳压器,峰值功率效率可达90.5%。在13个时钟网格中使用谐振时钟设计,为芯片节省约4%的功耗。该芯片由三个薄氧化晶体管Vt组成,以提高功率/性能,一个厚氧化晶体管用于实现高压电路。为了在功率包络内实现所需的性能,P8具有7个输入电压和15层金属,并使用脉冲时钟锁存器。P8总共有15823个焊片:5982个电源、7742个接地和2099个信号。功耗/性能的复杂性,模具的尺寸,以及高工作频率都给在积极的时间表内完成设计带来了重大挑战。本文介绍了P8中的一些设计方法和实现创新,重点是宏观设计拓扑(定制,阵列和合成),时序方法以及在芯片培养实验室中执行的电气特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physical design and implementation of POWER8™ (P8) server class processor
POWER8™ (P8) processor is a 12-core, 649mm2, 4.2B transistor chip fabricated in IBM's 22nm SOI technology with 2.5× socket performance improvement over its 32nm predecessor, POWER7+, driven by big data application and power efficient computing. Highly distributed chip voltage regulator achieves a peak power efficiency of 90.5%. Resonant clock design is used in 13 clock meshes to achieve about 4% power savings for the chip. This chip is built with three thin-oxide transistor Vt for power/performance benefit and one thick-oxide transistor to enable high-voltage circuits. In order to achieve desired performance within the power envelop, P8 is built with 7 input voltages and 15-layers of metals along with the use of pulsed-clock latches. The P8 has 15823 total pads: 5982 power, 7742 ground and 2099 signal. The power/performance complexity, size of the die, along with high operating frequency presented significant challenges to complete the design on an aggressive schedule. Some of the design methodology and implementation innovations in P8 have been presented in this paper, with an emphasis on macro design topologies (custom, array and synthesis), timing methodology, as well as the electrical characterizations performed in the chip bring-up lab.
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