集成双向沟槽横向功率mosfet的单片锂离子电池保护集成电路

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488024

D. H. Lu, N. Fujishima, A. Sugi, M. Sugimoto, S. Matsunaga, M. Sawada, M. Iwaya, K. Takagiwa

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引用次数: 18

摘要

一种低比导通电阻双向沟槽横向功率MOSFET (BTLPM)与控制器集成在0.6 μ m BiCDMOS工艺中，用于单电池锂离子电池保护器，将保护器在芯片级封装中的占地面积缩小至3mm2，是多芯片同类产品的三分之一。BTLPM开关的第一个硅结果表明，击穿电压为22V，栅极电压为4V(栅极电场为2.3MV/cm)时的导通电阻为6.8mOmegamm2。

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Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs

A low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM) has been integrated with a controller in a 0.6mum BiCDMOS process for single-cell lithium-ion battery protector, downsizing the footprint of the protector in chip-scale package to 3mm 2, one-third of its multi-chip counterparts. The first-silicon results of the BTLPM switches demonstrated a breakdown voltage of 22V, a specific on-resistance of 6.8mOmegamm2 at a gate voltage of 4V (a gate electrical field of 2.3MV/cm)

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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