PZT族薄膜的畴与压电像

Y. Masuda, K. Kakimoto, H. Kakemoto, K. Watanabe
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引用次数: 0

摘要

PZT薄膜是铁电随机存取存储器(FeRAM)和微机电系统(MEMS)的重要材料。对于这些应用,阐明铁电畴的运动与其压电性能之间的关系是很重要的。采用原子力显微镜(AFM)和KFM技术,研究了当直流电压通过导电尖端作用于pld衍生的PZT薄膜时,极化畴和晶粒的纳米级结构。薄膜表面的形貌和压电畴图像清晰地显示出100 nm大小的可切换畴。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Domains and piezo-image of PZT family thin films
PZT thin films are promising materials for ferroelectric random access memory (FeRAM) and micro electro-mechanical system (MEMS). For these applications, it is important to clarify the relationship between the motion of ferroelectric domains and their piezoelectric properties. Nanometer-size structure of polarized domains and grains for PLD-derived PZT thin film was investigated by AFM and KFM, when dc voltage was applied to the film through a conductive tip. Topographic and piezoelectric domain images in the film surface clearly showed switchable domains with 100 nm in size.
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