基于40纳米CMOS技术的500 mhz 32位移位寄存器

Jyoshnavi Akiri, L. K. Tolentino, L. Yang, B. Esakki, S. Sampath, Chua-Chin Wang
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摘要

与单沿触发触发器(SETFF)不同,双沿触发触发器(DETFF)具有在上升沿或下降沿锁存数据的独特能力。所提出的DETFF采用并行双路径,不需要保持器进行输入信号升压,也不需要反相时钟进行反相操作。由于反馈逆变器可能会导致亚稳态,从而在意想不到的时间影响输出,因此在DETFF中使用Schmitt触发器取代了传统的反馈逆变器。所述DETFF在32位移位寄存器中实现,使用台积电40纳米CMOS进行功能测试。布局后仿真结果显示,在负载电容为60 pF时,移位寄存器的功耗降低31.71%,Tc-q延迟降低43.57%。它具有最佳的归一化能量/位归一化功率和归一化延迟/位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 500-MHz 32-bit DETFF-based Shift Register Utilizing 40-nm CMOS Technology
A double-edge triggered flip-flop (DETFF) has the distinct ability to latch data at either the rising or the falling edge of the edge unlike the single-edge triggered flip-flop (SETFF). The proposed DETFF uses parallel dual paths that work without the need of keepers for input signal boost and an inverting clock for the opposite phase operation. A Schmitt trigger replaced the conventional feedback inverter with keeper in the DETFF, since the feedback inverter may lead to metastability which can affect the output at unexpected timing. The said DETFF was implemented in a 32-bit shift register using TSMC 40-nm CMOS for functionality testing. At a load capacitance of 60 pF, 31.71% power consumption decrease and 43.57% Tc-q delay reduction were exhibited by the proposed shift register as shown by the post-layout simulation results. It has the best normalized energy per bit normalized power, and normalized delay per bit among prior works.
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