H. Yamada, T. Hoshi, T. Takewaki, T. Shibata, T. Ohmi, T. Nitta
{"title":"用简单脉冲电流应力技术评价铜互连的电迁移和应力迁移可靠性","authors":"H. Yamada, T. Hoshi, T. Takewaki, T. Shibata, T. Ohmi, T. Nitta","doi":"10.1109/IEDM.1993.347354","DOIUrl":null,"url":null,"abstract":"By using a simple pulsed-current stressing technique, we have demonstrated that both electromigration and stressmigration resistance of giant-grain Cu interconnects can be evaluated separately in a very efficient manner. From the results of such lifetests, it was found that the reliability of the the Cu interconnect is primarily determined by the stressmigration rather than by the electromigration.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique\",\"authors\":\"H. Yamada, T. Hoshi, T. Takewaki, T. Shibata, T. Ohmi, T. Nitta\",\"doi\":\"10.1109/IEDM.1993.347354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By using a simple pulsed-current stressing technique, we have demonstrated that both electromigration and stressmigration resistance of giant-grain Cu interconnects can be evaluated separately in a very efficient manner. From the results of such lifetests, it was found that the reliability of the the Cu interconnect is primarily determined by the stressmigration rather than by the electromigration.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique
By using a simple pulsed-current stressing technique, we have demonstrated that both electromigration and stressmigration resistance of giant-grain Cu interconnects can be evaluated separately in a very efficient manner. From the results of such lifetests, it was found that the reliability of the the Cu interconnect is primarily determined by the stressmigration rather than by the electromigration.<>