砷化铟(InAs)单双量子阱异质结构finfet

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223677

Arun V. Thathachary, N. Agrawal, K. Bhuwalka, M. Cantoro, Yeon-Cheol Heo, G. Lavallee, S. Maeda, S. Datta

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引用次数: 16

摘要

本文介绍了InAs单量子阱和双量子阱(DQW)异质结构finfet (FF)的实验证明及其优于In0.7Ga0.3As QW FF的性能。在40nm的鳍宽(Wfin)和LG = 2μm时，InAs单QW FF和InAs DQW FF的迁移率峰值分别为3531 cm2/V-sec和3950 cm2/V-sec。峰值gm为480 μS/μm, 541 μS/um;IDSAT分别为121 μA/μm、135 μA/μm;在LG=300nm (VD = 0.5V, IOFF=100 nA/μm)条件下，单波长和双波长FF的SSSAT分别为101 mV/dec和103 mV/dec。最后，InAs DQW被证明是高宽高比n通道FinFET的可行替代通道。

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Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In_0.7Ga_0.3As QW FF. Peak mobility of 3,531 cm²/V-sec and 3,950 cm²/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (W_fin) of 40nm and L_G = 2μm. Peak g_m of 480 μS/μm, 541 μS/um; I_DSAT of 121 μA/μm, 135 μA/μm; and SS_SAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at L_G=300nm (V_D = 0.5V, I_OFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.

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2015 Symposium on VLSI Technology (VLSI Technology)

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