{"title":"氧退火温度对AlGaN/GaN HEMTs的影响","authors":"O. Seok, Young-shil Kim, Jiyong Lim, M. Han","doi":"10.1109/ISPSD.2011.5890834","DOIUrl":null,"url":null,"abstract":"We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 8 30 V and a low drain leakage current of 1.2 nA/mm at VDS= 50 V and VGS= −5 V are exhibited by employing oxygen annealing at 550°C. The blocking characteristics are improved with increasing annealing temperature up to 550°C due to high density of deep traps generated by oxygen annealing. However, the blocking characteristics of the annealed device were degraded when the annealing temperature exceeds 550°C due to thermal damage on the surface of AlGaN/GaN HEMTs.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effect of oxygen annealing temperature on AlGaN/GaN HEMTs\",\"authors\":\"O. Seok, Young-shil Kim, Jiyong Lim, M. Han\",\"doi\":\"10.1109/ISPSD.2011.5890834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 8 30 V and a low drain leakage current of 1.2 nA/mm at VDS= 50 V and VGS= −5 V are exhibited by employing oxygen annealing at 550°C. The blocking characteristics are improved with increasing annealing temperature up to 550°C due to high density of deep traps generated by oxygen annealing. However, the blocking characteristics of the annealed device were degraded when the annealing temperature exceeds 550°C due to thermal damage on the surface of AlGaN/GaN HEMTs.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890834\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of oxygen annealing temperature on AlGaN/GaN HEMTs
We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 8 30 V and a low drain leakage current of 1.2 nA/mm at VDS= 50 V and VGS= −5 V are exhibited by employing oxygen annealing at 550°C. The blocking characteristics are improved with increasing annealing temperature up to 550°C due to high density of deep traps generated by oxygen annealing. However, the blocking characteristics of the annealed device were degraded when the annealing temperature exceeds 550°C due to thermal damage on the surface of AlGaN/GaN HEMTs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
