Er/sup 3+/-掺杂硅基平面光波电路

T. Kitagawa
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A key element in obtaining a high gain in short waveguides is uniform doping at high E?' concentrations. Quenching in E?' systems caused from upconversion [5] and the upconversion is accelerated in clusters because the upconversion energy transfer rate is in proportion to r (r: distance between neighboring ions). Therefore, we need to use host glass materials with high solubilities of E?' ions in order to obtain efficient amplification in planar waveguides. Since the solubility of rare earth ions in silica is low, codoping using phosphorus or aluminum is necessary to increase the E?' concentrations to a sufficient level of about 0.5 wt% in silica-based waveguides [6]. We have developed a technique for fabricating low-loss E?-doped silica-based waveguides made by flame hydrolysis deposition and reactive ion etching using phosphorus as a codopant [2]. A gain of 0.7 dB/cm is obtained at a wavelength of 1534 nm in waveguides with an E?' concentration of 0.5 wt%. Based on a design calculated using the amplifier theory including the upconversion [7], we demonstrated a 24 dB-gain planar waveguide amplifier with a noise figure of 3.8 dB using the 0.5 wt% Er3+-doped 35 cm-long waveguide and 980 nm laser diode pump sources [8]. Active PLCs, including optical sources, amplifiers and filters, have been demonstrated by integrating E?'-doped waveguides with various waveguide circuit elements. As integrated light sources, waveguide lasers with different cavity configurations have been reported. E?'-doped Y-branched waveguide lasers, which use an interferometric effect in the multiple cavity in order to control oscillation modes [9], were demonstrated. Wavelengthtunable oscillation in the 1.5 pm telecommunication window was obtained by applying electric power to a thermo-optic phase shifter integrated in a branch of the waveguide [lo]. An E3'doped ring laser equipped with a directional coupler generated output light with narrow linewidth of 200 kHz in a 9 cm-long ring cavity [ 1 11. More recently, single-longitudinal-mode oscillation was achieved in E?'-doped waveguide lasers with integrated Bragg reflectors [12]. The Bragg reflectors were photo-imprinted using 193 nm UV light exposure in Ge0,-free P,O,-codoped waveguides sensitized by H,-loading. Further integration of these light sources may lead to use in WDM optical communication systems. 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引用次数: 0

摘要

光通信系统的最新进展强调了集成光电路的重要性,如光源、放大器和多路/解路复用器。利用光放大的有源集成光电路主要是用半导体波导制成的。最近,光学放大在E?掺杂玻璃平面波导[1,2],开启了有源集成光电路的研究[3]。Ef"掺杂波导与硅基平面光波电路(plc)的集成[4]开辟了创建新系列有源集成电路的可能性。在这次演讲中,E?介绍了掺杂硅基plc。一、E?讨论了掺杂波导。然后,描述了它们在有源plc中的初步应用。在短波导中获得高增益的关键因素是在高E?的浓度。淬火在E?在簇中,由于上转换能量传递速率与r (r:相邻离子之间的距离)成正比,上转换被加速。因此,我们需要使用高溶解度的E?为了在平面波导中获得有效的放大。由于稀土离子在二氧化硅中的溶解度较低,因此需要用磷或铝共掺杂来增加E?在硅基波导中,浓度达到约0.5 wt%的足够水平[6]。我们已经开发了一种制造低损耗E?以磷为共掺杂剂,采用火焰水解沉积和反应离子刻蚀法制备的掺杂硅基波导[2]。在波长为1534 nm的波导中获得0.7 dB/cm增益。’浓度为0.5 wt%。基于包括上变频在内的放大器理论计算的设计[7],我们展示了一个24 dB增益的平面波导放大器,噪声系数为3.8 dB,使用0.5 wt% Er3+掺杂的35 cm长波导和980 nm激光二极管泵浦源[8]。有源plc,包括光源,放大器和滤波器,已通过集成E?具有各种波导电路元件的掺杂波导。作为集成光源,不同腔体结构的波导激光器已被报道。E ?展示了掺杂y分支波导激光器,该激光器利用多腔干涉效应来控制振荡模式[9]。通过对集成在波导分支中的热光移相器施加电力,可以在1.5 pm通信窗口中获得波长可调的振荡[1]。装有定向耦合器的掺e3 '环形激光器在长9 cm的环形腔内产生200 kHz的窄线宽输出光[11]。最近,在E?集成布拉格反射器的掺杂波导激光器[12]。采用193nm紫外光照射,在无Ge0, P,O,-共掺杂的H,-负载敏化波导中进行光印迹。这些光源的进一步集成可能导致在WDM光通信系统中使用。一种集成了1540/980 nm定向耦合器的波导放大器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Er/sup 3+/-doped Silica-based Planar Lightwave Circuits
Recent progress in optical communication systems has emphasized the importance of integrated optical circuits such as light sources, amplifiers, and multi/demultiplexers. Active integrated optical circuits which use optical amplification have been made mainly with semiconductor waveguides. Recently, optical amplification was achieved in E?'-doped glass planar waveguides [1,2] which initiated the study of active integrated optical circuits [3]. The integration of Ef"doped waveguides with silica-based planar lightwave circuits (PLCs) [4] opens up the possibility of creating a new family of active integrated circuits. In this talk, the technology of E?+-doped silica-based PLCs is presented. First, fabrication techniques and amplification characteristics of E?'-doped waveguides are discussed. Then, their preliminary applications to active PLCs are described. A key element in obtaining a high gain in short waveguides is uniform doping at high E?' concentrations. Quenching in E?' systems caused from upconversion [5] and the upconversion is accelerated in clusters because the upconversion energy transfer rate is in proportion to r (r: distance between neighboring ions). Therefore, we need to use host glass materials with high solubilities of E?' ions in order to obtain efficient amplification in planar waveguides. Since the solubility of rare earth ions in silica is low, codoping using phosphorus or aluminum is necessary to increase the E?' concentrations to a sufficient level of about 0.5 wt% in silica-based waveguides [6]. We have developed a technique for fabricating low-loss E?-doped silica-based waveguides made by flame hydrolysis deposition and reactive ion etching using phosphorus as a codopant [2]. A gain of 0.7 dB/cm is obtained at a wavelength of 1534 nm in waveguides with an E?' concentration of 0.5 wt%. Based on a design calculated using the amplifier theory including the upconversion [7], we demonstrated a 24 dB-gain planar waveguide amplifier with a noise figure of 3.8 dB using the 0.5 wt% Er3+-doped 35 cm-long waveguide and 980 nm laser diode pump sources [8]. Active PLCs, including optical sources, amplifiers and filters, have been demonstrated by integrating E?'-doped waveguides with various waveguide circuit elements. As integrated light sources, waveguide lasers with different cavity configurations have been reported. E?'-doped Y-branched waveguide lasers, which use an interferometric effect in the multiple cavity in order to control oscillation modes [9], were demonstrated. Wavelengthtunable oscillation in the 1.5 pm telecommunication window was obtained by applying electric power to a thermo-optic phase shifter integrated in a branch of the waveguide [lo]. An E3'doped ring laser equipped with a directional coupler generated output light with narrow linewidth of 200 kHz in a 9 cm-long ring cavity [ 1 11. More recently, single-longitudinal-mode oscillation was achieved in E?'-doped waveguide lasers with integrated Bragg reflectors [12]. The Bragg reflectors were photo-imprinted using 193 nm UV light exposure in Ge0,-free P,O,-codoped waveguides sensitized by H,-loading. Further integration of these light sources may lead to use in WDM optical communication systems. A waveguide amplifiers integrated with a 1540/980 nm directional coupler which
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