低压功率MOS的电热不稳定性:实验表征

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764106

G. Breglio, F. Frisina, A. Magri, P. Spirito

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引用次数: 25

摘要

本文介绍了一种新型低压大电流功率mosfet的动态热映射实验结果。报告的结果强调，与功率bjt的情况一样，热点现象也发生在这类器件中。此外，我们对这一现象给出了理论解释，并提出了一种新的方法来理解决定这种MOS器件温度不稳定性的原因。

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Electro-thermal instability in low voltage power MOS: Experimental characterization

In this paper, we present experimental results of dynamic thermal mapping on a new class of low voltage high current power MOSFETs. The reported results underline that, as in the case of power BJTs, the hot-spot phenomenon also occurs in this class of devices. Moreover, we give a theoretical interpretation of this phenomenon and propose a novel approach to understand the causes that can determine the temperature instabilities in such MOS devices.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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