SiGe HBT中的阻挡效应:高注入基极电流增加的建模

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365756

S. Frégonèse, T. Zimmer, C. Maneux, P. Sulima

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引用次数: 5

摘要

研究了HBT在异质界面处的寄生能带势垒形成。物理模拟表明，在高注入状态下，额外的基极电流增加与寄生屏障的形成有关。与寄生势垒相关的电荷计算使我们能够推导出基极电流增加的模型，该模型实现为电可扩展紧凑模型并应用于测量。

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Barrier effects in SiGe HBT: modeling of high-injection base current increase

The HBT's parasitic energy band barrier formation, located at the hetero-interface, was investigated. Physical simulations show that additional base current increase in the high-injection regime is associated with the parasitic barrier formation. The charge calculation related to the parasitic barrier allows us to derive a model for the base current increase which is implemented into an electrical scalable compact model and applied on measurements.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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