考虑接触电阻的SI/PI应用的精确插座建模和验证

2019 IEEE International Symposium on Electromagnetic Compatibility, Signal & Power Integrity (EMC+SIPI) Pub Date : 2019-07-01 DOI:10.1109/ISEMC.2019.8825282

Tao Wang, Varin Sriboonlue, Selman Ozbayat, Gerardo Romo. L, J. Shin, T. Michalka

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引用次数: 1

摘要

在本文中，我们提出了一种精确的插座建模方法，用于信号完整性和功率完整性应用，使用准静态电磁求解器。考虑接触电阻，因为它是插座建模中不可忽略的组件。采用平行共振频率(PRF)法对电磁模型和接触电阻进行了验证。结果表明，准静态解算器可用于提取s参数或RLGC参数，并构建无端口寄生的精确等效模型。

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Accurate Socket Modeling And Validation For SI/PI Applications Considering Contact Resistance

In this paper, we propose an accurate socket modeling methodology for signal integrity and power integrity applications using a quasi-static EM solver. Contact resistance is considered since it is a non-negligible component in socket modeling. A Parallel Resonance Frequency (PRF) method is used to validate the EM model and verify the contact resistance. It is shown that a quasi-static solver can be used to extract S-parameter or RLGC parameters and construct an accurate equivalent model without port parasitic.

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2019 IEEE International Symposium on Electromagnetic Compatibility, Signal & Power Integrity (EMC+SIPI)

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