利用MTCMOS技术降低移位寄存器的功耗和延迟

Sonam Gour, G. Soni
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引用次数: 6

摘要

在大规模集成的过程中,需要在极小的面积内实现大量的晶体管。组合逻辑在量子和许多工业设计中都非常有用。降低功耗和延迟是VLSI设计的主要目标。在大规模集成电路中,抑制亚阈值泄漏电流对于实现绿色计算和促进电力电子的更多使用至关重要。本文采用或不采用MTCMOS技术实现了移位寄存器。利用Cosmos Scope工具对功率延迟进行分析,并在HSPICE中进行仿真。移位寄存器是使用32nm和45nm的BPTM模型文件制作的。利用移位寄存器中的MTCMOS技术,在施加电压为0.7V时,在32nm处泄漏功率降低44%,在施加电压为0.9V时,在45nm处泄漏功率降低57%。在32nm处0.7V和45nm处0.9V分别降低了5%和21%的能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reduction of Power and Delay in Shift Register using MTCMOS Technique
In the process of large scale integration lot of transistors are implemented in a very minimum area. Combinational logic has very useful in quantum and many industrial designs. Reducing the power and delay is the principle object in VLSI design. Suppressing sub-threshold leakage current in large scale integration is essential for achieving green computing and facilitating the more usage of power electronics. In this paper the shift register is implemented with or without MTCMOS technique. The Cosmos Scope tool is used to analyze the power delay with the simulation in HSPICE. The Shift Register is fabricated by using the 32nm and 45nm BPTM model file. With the help of MTCMOS technique in Shift Register a reduction in leakage power is 44% in 32nm with the applied voltage of 0.7V and 57% in 45nm with the applied voltage of 0.9V. Energy is reduced by the 5% for 0.7V for 32nm and 21% for 0.9V at 45nm.
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