硅衬底上耦合片上互连频率相关线路参数的精确封闭表达式

IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565) Pub Date : 2001-10-29 DOI:10.1109/EPEP.2001.967676

Hai Lan, Amy, A. Weisshaar

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引用次数: 9

摘要

给出了损耗硅衬底上耦合片上互连的频率相关[R]、[L]、[G]、[C]线参数的精确封闭表达式。利用复像法得到了频率相关串联阻抗参数的封闭表达式。频率相关的并联导纳参数用高频和低频渐近静态解表示。所提出的封闭表达式与准静态解和全波解都很好地吻合。

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Accurate closed-form expressions for the frequency-dependent line parameters of coupled on-chip interconnects on silicon substrate

Accurate closed-form expressions for the frequency-dependent [R], [L], [G], [C] line parameters of coupled on-chip interconnects on lossy silicon substrate are presented. The closed-form expressions for the frequency-dependent series impedance parameters are obtained using a complex image method. The frequency-dependent shunt admittance parameters are expressed using high- and low-frequency asymptotic static solutions. The proposed closed-from expressions are shown to be in good agreement with both quasi-static and full-wave electromagnetic solutions.

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IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565)

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