用于3D集成的临时键合/脱键和永久晶圆键合解决方案

H. Ishida, S. Sood, C. Rosenthal, S. Lutter
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引用次数: 5

摘要

薄晶圆处理(或临时键合/去键合)和永久晶圆键合是3D-IC集成工艺的两个关键使能技术。必须仔细选择临时粘接粘合剂和脱粘方法,以获得无损伤的薄化加工晶圆片。室温机械剥离脱键方法具有良好的脱键波前控制,是一种很有前途的脱键方法。金属粘合剂或金属氧化物混合键合可以创建最终的堆叠3D-IC结构,具有优越的机械强度,电气性能和良好的键合后对齐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temporary bonding/de-bonding and permanent wafer bonding solutions for 3D integration
Thin wafer handling (or temporary bonding/de-bonding) and permanent wafer bonding are two of the key enabling technologies for 3D-IC integration process. Temporary bonding adhesive in conjunction with de-bonding method has to be carefully selected to obtain damage-free thinned processed wafers. Room temperature mechanical lift-off de-bonding method with proper de-bond wave front control is considered to be promising. Metal-adhesive or metal-oxide hybrid bonding can create a final stacked 3D-IC structure with superior mechanical strength, electrical performance and excellent post-bond alignment.
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