J. Borrel, M. Grégoire, E. Ghegin, S. Joblot, Rémi Vallat, A. Valery, M. Juhel, R. Bianchi
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Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density
Until the 90-nm node, CoSi 2 silicide have been widely used in semiconductor industry. More recently, in order to meet performance requirements in advanced digital nodes, process integration have consensually shifted towards NiPt-based silicides [1] . Nevertheless, advanced memory and imaging technologies being still based on 90-nm core MOS, developments and studies on CoSi 2 silicide are still of the best interest as new challenges are emerging.
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