{"title":"一种用于sar辅助管路adc的高增益、高速参数化残差放大器","authors":"P. Bahubalindruni, J. Goes, P. Barquinha","doi":"10.1109/SMACD.2016.7520732","DOIUrl":null,"url":null,"abstract":"This paper presents a high-speed and high-gain dynamic residue amplifier for two-stage SAR-assisted pipeline ADC. Parametric amplification technique is incorporated in the residue amplifier to enhance the gain, in order to meet the industrial requirements of the residue amplifier of an ADC with ENOB ≥ 10.5 bits. From simulations the proposed circuit has shown a gain of 22.05 dB and a power consumption of 0.31 mW, at an operating frequency of 1.75 GHz when VDD is 1.2 V and CL is 150 fF in a standard 65 nm CMOS technology.","PeriodicalId":441203,"journal":{"name":"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs\",\"authors\":\"P. Bahubalindruni, J. Goes, P. Barquinha\",\"doi\":\"10.1109/SMACD.2016.7520732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-speed and high-gain dynamic residue amplifier for two-stage SAR-assisted pipeline ADC. Parametric amplification technique is incorporated in the residue amplifier to enhance the gain, in order to meet the industrial requirements of the residue amplifier of an ADC with ENOB ≥ 10.5 bits. From simulations the proposed circuit has shown a gain of 22.05 dB and a power consumption of 0.31 mW, at an operating frequency of 1.75 GHz when VDD is 1.2 V and CL is 150 fF in a standard 65 nm CMOS technology.\",\"PeriodicalId\":441203,\"journal\":{\"name\":\"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMACD.2016.7520732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD.2016.7520732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs
This paper presents a high-speed and high-gain dynamic residue amplifier for two-stage SAR-assisted pipeline ADC. Parametric amplification technique is incorporated in the residue amplifier to enhance the gain, in order to meet the industrial requirements of the residue amplifier of an ADC with ENOB ≥ 10.5 bits. From simulations the proposed circuit has shown a gain of 22.05 dB and a power consumption of 0.31 mW, at an operating frequency of 1.75 GHz when VDD is 1.2 V and CL is 150 fF in a standard 65 nm CMOS technology.