用PADOX工艺制备的多值单电子SRAM

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981456

H. Inokawa, A. Fujiwara, Y. Takahashi

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引用次数: 6

摘要

提出了一种由单电子晶体管(SET)和MOSFET组成的多值静态存储器。存储器操作通过使用cmos兼容模式依赖氧化(PADOX)工艺制造的晶体管进行验证。结果表明，使用具有多值能力的SET可以显著提高CMOS存储密度。

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A multiple-valued single-electron SRAM by the PADOX process

Multiple-valued static memory consisting of a single-electron transistor (SET) and a MOSFET is proposed. The memory operation is verified by using transistors fabricated by the CMOS-compatible pattern-dependent oxidation (PADOX) process. The results indicate that a dramatic increase of CMOS memory density can be attained by the use of a SET with multiple-valued capability.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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