用于甚高频和微波应用的高电阻率SIMOX衬底中的耦合效应

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526461

J. Raskin, D. Vanhoenacker, J. Colinge, D. Flandre

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引用次数: 2

摘要

已经提出使用高电阻率SIMOX衬底，以便在SOI CMOS技术中集成用于MMIC应用的低损耗适应线。在这项工作中，我们研究了衬底电阻率对另一个重要的衬底耦合效应的影响:放大器配置中有源晶体管的固有负载阻抗，它决定了器件的最大稳定频率。相关的设备和线路建模方面也进行了讨论。

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Coupling effects in high-resistivity SIMOX substrates for VHF and microwave applications

The use of high-resistivity SIMOX substrates has been proposed to enable the integration of low-loss adapted lines for MMIC applications in SOI CMOS technology. In this work we investigate the impact of the substrate resistivity on another important substrate coupling effect: the intrinsic load impedance of active transistors in amplifier configuration, which conditions the device maximum stable frequency. Related device and line modelling aspects are also discussed.

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1995 IEEE International SOI Conference Proceedings

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