utboxsoi FBRAM器件中活化能对电场的依赖性

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 1900-01-01 DOI:10.1109/S3S.2013.6716570

T. Nicoletti, S. Santos, K. Sasaki, J. Martino, M. Aoulaiche, E. Simoen, C. Claeys

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引用次数: 2

摘要

研究了应用于单晶体管浮体RAM的UTBOX FDSOI的无延伸(underlap)活化能与电场的关系。研究发现，在相同栅极叠加下，当保持条件下电场不同时，可以提取出两种不同的活化能。电场升高所引起的势垒降低越高，就意味着陷阱能级越高。这种依赖背后的主要机制被确定并归因于普尔-弗伦克尔效应。

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The activation energy dependence on the electric field in UTBOX SOI FBRAM devices

The dependence of the activation energy on the electric field is investigated in extensionless (underlap) UTBOX FDSOI applied as a single transistor floating body RAM. It was found that with the same gate stack it is possible to extract two different activation energies when the electric field in the hold condition is different. Higher barrier lowering induced by elevated electric field implies in higher energy trap level. The dominant mechanism behind this dependence is identified and attributed to Poole-Frenkel effect.

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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