Michael Hanhart, Jonas Zoche, Jan Grobe, L. Weihs, Leo Rolff, R. Wunderlich, S. Heinen
{"title":"一种用于单面ZVS和自适应振铃抑制技术的高效升压变换器的半桥栅驱动器","authors":"Michael Hanhart, Jonas Zoche, Jan Grobe, L. Weihs, Leo Rolff, R. Wunderlich, S. Heinen","doi":"10.1109/ESSCIRC55480.2022.9911336","DOIUrl":null,"url":null,"abstract":"This paper proposes an integrated bootstrapped Half-Bridge (HB) gate driver, which is used in a synchronous boost converter for photovoltaic applications. The HB is operated with single-sided zero-voltage-switching (ZVS) at the low-side (LS) or high-side (HS), dependent on the inductor current sign, to minimize switching losses. The gate driver architecture is based on segmented and distributed output stages with split outputs for turn-on and turn-off. During turn-on, the gate current is limited to 360 mA initially and gets boosted to 1.2 A after the Miller-Plateau (MP) has been actively detected. This minimizes the di/dt in the reverse recovery phase and, secondly, reduces the turn-on time by 26 %. A non-overlap time between LS and HS stage is guaranteed by a supervisor circuit. The boost converter achieves 98.6 % peak efficiency.","PeriodicalId":168466,"journal":{"name":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Half-Bridge Gate-Driver for high-efficient Boost Converter Applications with single-sided ZVS and an adaptive Ringing Suppression Technique\",\"authors\":\"Michael Hanhart, Jonas Zoche, Jan Grobe, L. Weihs, Leo Rolff, R. Wunderlich, S. Heinen\",\"doi\":\"10.1109/ESSCIRC55480.2022.9911336\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes an integrated bootstrapped Half-Bridge (HB) gate driver, which is used in a synchronous boost converter for photovoltaic applications. The HB is operated with single-sided zero-voltage-switching (ZVS) at the low-side (LS) or high-side (HS), dependent on the inductor current sign, to minimize switching losses. The gate driver architecture is based on segmented and distributed output stages with split outputs for turn-on and turn-off. During turn-on, the gate current is limited to 360 mA initially and gets boosted to 1.2 A after the Miller-Plateau (MP) has been actively detected. This minimizes the di/dt in the reverse recovery phase and, secondly, reduces the turn-on time by 26 %. A non-overlap time between LS and HS stage is guaranteed by a supervisor circuit. The boost converter achieves 98.6 % peak efficiency.\",\"PeriodicalId\":168466,\"journal\":{\"name\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC55480.2022.9911336\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC55480.2022.9911336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Half-Bridge Gate-Driver for high-efficient Boost Converter Applications with single-sided ZVS and an adaptive Ringing Suppression Technique
This paper proposes an integrated bootstrapped Half-Bridge (HB) gate driver, which is used in a synchronous boost converter for photovoltaic applications. The HB is operated with single-sided zero-voltage-switching (ZVS) at the low-side (LS) or high-side (HS), dependent on the inductor current sign, to minimize switching losses. The gate driver architecture is based on segmented and distributed output stages with split outputs for turn-on and turn-off. During turn-on, the gate current is limited to 360 mA initially and gets boosted to 1.2 A after the Miller-Plateau (MP) has been actively detected. This minimizes the di/dt in the reverse recovery phase and, secondly, reduces the turn-on time by 26 %. A non-overlap time between LS and HS stage is guaranteed by a supervisor circuit. The boost converter achieves 98.6 % peak efficiency.