{"title":"一个4.5 fJ/转换步长10位0.6V异步SAR ADC,用于65nm CMOS无电池微型传感器节点","authors":"A. Dadashi, Y. Berg, O. Mirmotahari","doi":"10.23919/MIXDES.2019.8787150","DOIUrl":null,"url":null,"abstract":"This paper presents a 0.6-V energy-efficient 10-bit Asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with internal clock generator. Also a multiplexer is designed to serially transfer the output bits to outside the chip. A novel capacitive array also is proposed in this paper. The prototype is designed and fabricated in a 65-nm CMOS with a core size of 290 μm × 130 pm (0.0377 mm2). At 2.4 KS/s and Nyquist rate input, it consumes 4 nW at 0.6-V supply with an achieved signal-to-noise-and distortion ratio of 53.2 dB and a resulting figure of merit (FOM) of 4.5 fJ/conv.-step. Prototyped in a low-power 65 nm CMOS process, the ADC achieves an INL and DNL of 1.57 LSB and 0.95 LSB respectively at 0.6 V supply.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 4.5 fJ/conversion-step 10-bit 0.6V Asynchronous SAR ADC for Battery-free Miniature Sensor Nodes in 65nm CMOS\",\"authors\":\"A. Dadashi, Y. Berg, O. Mirmotahari\",\"doi\":\"10.23919/MIXDES.2019.8787150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 0.6-V energy-efficient 10-bit Asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with internal clock generator. Also a multiplexer is designed to serially transfer the output bits to outside the chip. A novel capacitive array also is proposed in this paper. The prototype is designed and fabricated in a 65-nm CMOS with a core size of 290 μm × 130 pm (0.0377 mm2). At 2.4 KS/s and Nyquist rate input, it consumes 4 nW at 0.6-V supply with an achieved signal-to-noise-and distortion ratio of 53.2 dB and a resulting figure of merit (FOM) of 4.5 fJ/conv.-step. Prototyped in a low-power 65 nm CMOS process, the ADC achieves an INL and DNL of 1.57 LSB and 0.95 LSB respectively at 0.6 V supply.\",\"PeriodicalId\":309822,\"journal\":{\"name\":\"2019 MIXDES - 26th International Conference \\\"Mixed Design of Integrated Circuits and Systems\\\"\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 MIXDES - 26th International Conference \\\"Mixed Design of Integrated Circuits and Systems\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES.2019.8787150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2019.8787150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4.5 fJ/conversion-step 10-bit 0.6V Asynchronous SAR ADC for Battery-free Miniature Sensor Nodes in 65nm CMOS
This paper presents a 0.6-V energy-efficient 10-bit Asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with internal clock generator. Also a multiplexer is designed to serially transfer the output bits to outside the chip. A novel capacitive array also is proposed in this paper. The prototype is designed and fabricated in a 65-nm CMOS with a core size of 290 μm × 130 pm (0.0377 mm2). At 2.4 KS/s and Nyquist rate input, it consumes 4 nW at 0.6-V supply with an achieved signal-to-noise-and distortion ratio of 53.2 dB and a resulting figure of merit (FOM) of 4.5 fJ/conv.-step. Prototyped in a low-power 65 nm CMOS process, the ADC achieves an INL and DNL of 1.57 LSB and 0.95 LSB respectively at 0.6 V supply.