石墨烯在SiC上的理论研究

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI:10.1109/INEC.2014.7460437

H. Kageshima, H. Hibino, H. Yamaguchi, M. Nagase

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引用次数: 0

摘要

用第一性原理计算方法研究了碳化硅上的石墨烯。本文重点关注[1-100]步骤在生长机制中的作用，并与[11-20]步骤进行比较讨论。研究发现，表面台阶对石墨烯的生长起着重要的作用。这些研究为石墨烯在碳化硅上的应用提供了基础知识。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical studies of graphene on SiC

Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1-100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11-20] step. It has been found that the surface steps play important roles for the graphene growth. These studies provide us fundamental knowledge about the application of graphene on SiC.

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2014 IEEE International Nanoelectronics Conference (INEC)

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