超薄栅极氧化物CMOS器件的可靠性:设计视角

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-08-14 DOI:10.1109/ICICDT.2006.220808

C. Parthasarathy, M. Denais, V. Huard, G. Ribes, E. Vincent, A. Bravaix

{"title":"超薄栅极氧化物CMOS器件的可靠性:设计视角","authors":"C. Parthasarathy, M. Denais, V. Huard, G. Ribes, E. Vincent, A. Bravaix","doi":"10.1109/ICICDT.2006.220808","DOIUrl":null,"url":null,"abstract":"Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective - in terms of characterization, mechanisms and circuit analysis - introducing assessment of multiple degradation modes on same device","PeriodicalId":447050,"journal":{"name":"2006 IEEE International Conference on IC Design and Technology","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective\",\"authors\":\"C. Parthasarathy, M. Denais, V. Huard, G. Ribes, E. Vincent, A. Bravaix\",\"doi\":\"10.1109/ICICDT.2006.220808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective - in terms of characterization, mechanisms and circuit analysis - introducing assessment of multiple degradation modes on same device\",\"PeriodicalId\":447050,\"journal\":{\"name\":\"2006 IEEE International Conference on IC Design and Technology\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on IC Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2006.220808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on IC Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2006.220808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在最新的技术中，由于CMOS器件的退化，越来越需要对设计影响进行评估。本文从设计的角度讨论了由通道热载流子、NBTI和氧化物击穿引起的降解——从表征、机制和电路分析的角度——介绍了对同一器件上多种降解模式的评估

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective

Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective - in terms of characterization, mechanisms and circuit analysis - introducing assessment of multiple degradation modes on same device

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE International Conference on IC Design and Technology

自引率

0.00%

发文量