23.2dBm在210GHz到21.0dBm在235GHz 16路PA-Cell组合InP HBT SSPA MMIC

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978528

Z. Griffith, M. Urteaga, P. Rowell, R. Pierson

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引用次数: 23

摘要

提出了一种3级16路PA-cell组合InP HBT固态功率放大器MMIC，在210GHz时输出23.2dBm (208.7mW)，在235GHz时输出21.0dBm (126.0mW)，引脚为10dBm，这代表了13.2-11.0dB的大信号增益。该SSPA的总大功率带宽在190.8 ~ 237ghz之间。放大器在206243GHz范围内具有24.3-26.7dB S21增益。配电柜总功率5.81W。PA单元单元使用功率级联单元拓扑，用于生成3级4Cell输出组合SSPA，然后使用低插入损耗威尔金森分频器和组合器将这些4Cell SSPA组合起来，以实现整体16路PA单元组合MMIC。这是首次报道的SSPA MMIC在200GHz以上工作时展示> 200mW输出。这项工作在190.8-237GHz范围内的输出功率是SSPA MMIC报告的最高值，在190.8-225GHz范围内提高了1.16-1.6倍，在230-235GHz范围内提高了1.6倍。在相同频率下，该结果接近或超过了基于固态PA(四芯片波导块组合模块)的最高输出值。

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A 23.2dBm at 210GHz to 21.0dBm at 235GHz 16-Way PA-Cell Combined InP HBT SSPA MMIC

A 3-stage, 16-way PA-cell combined InP HBT solidstate power amplifier MMIC is presented demonstrating 23.2dBm (208.7mW) Pout at 210GHz to 21.0dBm (126.0mW) at 235GHz for 10dBm Pin - this represents 13.2-11.0dB large-signal gain. The total high-power bandwidth of this SSPA is between 190.8-237GHz. The amplifier has 24.3-26.7dB S21 gain from 206243GHz. The total PDC is 5.81W. A power-cascode cell topology is used for the PA unit cell, which is used to generate a 3-Stage, 4Cell output combined SSPA - then four of these 4-Cell SSPAs are combined using low insertion loss Wilkinson dividers and combiners to realize the overall 16-way PA cell combined MMIC. This is the first reported SSPA MMIC demonstrating > 200mW Pout above 200GHz operation. The output powers from this work across 190.8-237GHz are the highest values reported from an SSPA MMIC and improves upon state-of-the-art by 1.16-1.6× from 190.8-225GHz and by 1.6× from 230-235GHz. This result closely meets or exceeds across the same frequency operation the highest Pout reported from a solid-state based PA, a four-chip waveguide-block combined module.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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