LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growing LT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have been performed. Although numerous optoelectronic applications of LT GaAs have been demonstrated we believe that this is one of the rare cases when LT GaAs has been used in semiconductor laser technology.