{"title":"用于超低功率射频能量收集的陡坡SS“pn体捆结SOI场效应管”锐导二极管","authors":"Masayuki Ono, J. Ida, Takayuki Mori, K. Ishibashi","doi":"10.1109/EDTM55494.2023.10103123","DOIUrl":null,"url":null,"abstract":"The sharp turn-on diode by our newly proposed steep subthreshold slope (SS) “PN-Body Tied (PNBT) SOI-FET” was successfully modeled for circuit simulations. We simulated the rectenna with a combination of the PNBT-diode and the high impedance (Hi-Z) antenna. The rectification efficiency over 50 % at the input of -30 dBm will be obtained. It is very high efficiency compared with the optimized conventional diodes. We fabricated the Cockcroft-Walton rectifier with PNBT-diodes. It was also confirmed that the efficiency is improved, as expected by simulations.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sharp Turn-on Diode by Steep SS “PN-Body Tied SOI FET” for Ultra-low Power RF Energy Harvesting\",\"authors\":\"Masayuki Ono, J. Ida, Takayuki Mori, K. Ishibashi\",\"doi\":\"10.1109/EDTM55494.2023.10103123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The sharp turn-on diode by our newly proposed steep subthreshold slope (SS) “PN-Body Tied (PNBT) SOI-FET” was successfully modeled for circuit simulations. We simulated the rectenna with a combination of the PNBT-diode and the high impedance (Hi-Z) antenna. The rectification efficiency over 50 % at the input of -30 dBm will be obtained. It is very high efficiency compared with the optimized conventional diodes. We fabricated the Cockcroft-Walton rectifier with PNBT-diodes. It was also confirmed that the efficiency is improved, as expected by simulations.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sharp Turn-on Diode by Steep SS “PN-Body Tied SOI FET” for Ultra-low Power RF Energy Harvesting
The sharp turn-on diode by our newly proposed steep subthreshold slope (SS) “PN-Body Tied (PNBT) SOI-FET” was successfully modeled for circuit simulations. We simulated the rectenna with a combination of the PNBT-diode and the high impedance (Hi-Z) antenna. The rectification efficiency over 50 % at the input of -30 dBm will be obtained. It is very high efficiency compared with the optimized conventional diodes. We fabricated the Cockcroft-Walton rectifier with PNBT-diodes. It was also confirmed that the efficiency is improved, as expected by simulations.
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