用于漂移室的低功耗0.13µm ADC

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) Pub Date : 2009-12-01 DOI:10.1109/ICECS.2009.5410904

S. D’Amico, M. Matteis, F. Grancagnolo, M. Panareo, R. Perrino, G. Chiodini, A. Corvaglia, G. Cocciolo, A. Baschirotto

{"title":"用于漂移室的低功耗0.13µm ADC","authors":"S. D’Amico, M. Matteis, F. Grancagnolo, M. Panareo, R. Perrino, G. Chiodini, A. Corvaglia, G. Cocciolo, A. Baschirotto","doi":"10.1109/ICECS.2009.5410904","DOIUrl":null,"url":null,"abstract":"In this paper a 6 bits, 1GSa/s flash ADC is presented. It is included in a front end for drift chambers. The front-end has been designed in a 0.13µm CMOS technology with 1.2V supply voltage. The single circuit blocks are described in detail. The ENOB is 5.86bits, while the overall power consumption is 58.1mA.","PeriodicalId":343974,"journal":{"name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A low power 0.13µm ADC for drift chambers\",\"authors\":\"S. D’Amico, M. Matteis, F. Grancagnolo, M. Panareo, R. Perrino, G. Chiodini, A. Corvaglia, G. Cocciolo, A. Baschirotto\",\"doi\":\"10.1109/ICECS.2009.5410904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a 6 bits, 1GSa/s flash ADC is presented. It is included in a front end for drift chambers. The front-end has been designed in a 0.13µm CMOS technology with 1.2V supply voltage. The single circuit blocks are described in detail. The ENOB is 5.86bits, while the overall power consumption is 58.1mA.\",\"PeriodicalId\":343974,\"journal\":{\"name\":\"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2009.5410904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2009.5410904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了一种6位、1GSa/s的闪存ADC。它包括在前端漂移室。前端采用0.13µm CMOS技术设计，电源电压为1.2V。详细描述了单电路模块。ENOB为5.86位，而总功耗为58.1mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A low power 0.13µm ADC for drift chambers

In this paper a 6 bits, 1GSa/s flash ADC is presented. It is included in a front end for drift chambers. The front-end has been designed in a 0.13µm CMOS technology with 1.2V supply voltage. The single circuit blocks are described in detail. The ENOB is 5.86bits, while the overall power consumption is 58.1mA.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

自引率

0.00%

发文量