C. Uang, H. Chuang, T. Shen -Fu, K. Thei, P. Lai, S. Fu, Y. Tsai, Wen-Chau Liu
{"title":"用于ULSI应用的扩散和多晶硅电阻器的温度依赖特性","authors":"C. Uang, H. Chuang, T. Shen -Fu, K. Thei, P. Lai, S. Fu, Y. Tsai, Wen-Chau Liu","doi":"10.1109/IWJT.2004.1306860","DOIUrl":null,"url":null,"abstract":"The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18 /spl mu/m CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R/sub bulk/) and interface resistance (R/sub interface/) are obtained at different temperature. For diffused resistors, the R/sub bulk/ and R/sub interface/, values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of RNA are found in n/sup +/ and p/sup +/ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications\",\"authors\":\"C. Uang, H. Chuang, T. Shen -Fu, K. Thei, P. Lai, S. Fu, Y. Tsai, Wen-Chau Liu\",\"doi\":\"10.1109/IWJT.2004.1306860\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18 /spl mu/m CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R/sub bulk/) and interface resistance (R/sub interface/) are obtained at different temperature. For diffused resistors, the R/sub bulk/ and R/sub interface/, values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of RNA are found in n/sup +/ and p/sup +/ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306860\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications
The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18 /spl mu/m CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R/sub bulk/) and interface resistance (R/sub interface/) are obtained at different temperature. For diffused resistors, the R/sub bulk/ and R/sub interface/, values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of RNA are found in n/sup +/ and p/sup +/ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.
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