设计毫米波应用于硅技术

A. Cathelin, B. Martineau, N. Seller, S. Douyere, J. Gorisse, S. Pruvost, C. Raynaud, F. Gianesello, S. Montusclat, S. Voinigescu, A. Niknejad, D. Belot, J. Schoellkopf
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引用次数: 45

摘要

本文介绍了先进的BiCMOS和CMOS技术在毫米波应用中的潜力。首先,介绍了这些频段的目标应用:从汽车巡航控制雷达到无线链路。然后,概述了解决这些应用的技术方案:SiGe BiCMOS,纳米体和SOI CMOS技术。这项工作的重点是有源和无源器件(BEOL)行为,以适应20 GHz以上的设计。本文继续介绍了集成电路的几种解决方案:前端接收器块,传输块和频率合成解决方案。概述了硅电路的发展现状。最后,对系统集成和应用方面的未来挑战进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design for millimeter-wave applications in silicon technologies
This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work focuses both on active and passive devices (BEOL) behavior to suit for design above 20 GHz. The paper continues with a presentation of several solutions for integrated circuits on the presented topic: front-end receiver blocks, transmission blocks and frequency synthesis solutions. An overview of state of the art silicon circuits is given. As a conclusion, perspectives regarding future challenges in terms of system integration and applications are discussed.
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