Asghar Bahramali, M. López-Vallejo
{"title":"一种适用于RFID应用的耐温度变化cmos电压基准","authors":"Asghar Bahramali, M. López-Vallejo","doi":"10.1109/PATMOS.2018.8464164","DOIUrl":null,"url":null,"abstract":"In this paper a reference voltage circuit is presented for outdoor RFID applications. The circuit consists of a Dickson charge pump and a series of stacked diode connected CMOS devices. With this configuration we have introduced a new approach to produce a 1.515V reference voltage from a Dickson charge pump which shows robust behavior against temperature variation. Taking advantage of a harvested RFID signal rendered the circuit suitable for a wide range of applications in which energy and area constraints are of great concern. The circuit has been designed with conventional CMOS devices using a commercial 40nm technology and simulated with cadence. The proposed circuit consumes 235nW power with 88 PPM/○C temperature coefficient in temperature range of −10°C to 125°C. The total active area of the circuit is 0.00036mm2. The circuit shows +10% −12% variation from the nominal value due to process corner analysis and its PSRR(dB) is −47©915MHz.","PeriodicalId":234100,"journal":{"name":"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Temperature Variation Tolerant CMOS-Only Voltage Reference for RFID Applications\",\"authors\":\"Asghar Bahramali, M. López-Vallejo\",\"doi\":\"10.1109/PATMOS.2018.8464164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a reference voltage circuit is presented for outdoor RFID applications. The circuit consists of a Dickson charge pump and a series of stacked diode connected CMOS devices. With this configuration we have introduced a new approach to produce a 1.515V reference voltage from a Dickson charge pump which shows robust behavior against temperature variation. Taking advantage of a harvested RFID signal rendered the circuit suitable for a wide range of applications in which energy and area constraints are of great concern. The circuit has been designed with conventional CMOS devices using a commercial 40nm technology and simulated with cadence. The proposed circuit consumes 235nW power with 88 PPM/○C temperature coefficient in temperature range of −10°C to 125°C. The total active area of the circuit is 0.00036mm2. The circuit shows +10% −12% variation from the nominal value due to process corner analysis and its PSRR(dB) is −47©915MHz.\",\"PeriodicalId\":234100,\"journal\":{\"name\":\"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PATMOS.2018.8464164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PATMOS.2018.8464164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3