部分耗尽薄膜SOI器件的瞬态行为

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526432

H. Shin, I. Lim, M. Racanelli, W.M. Huang, J. Foerstner, B. Hwang, J. Whitfield, H. Shin, T. Wetteroth, S. Hong, S. Wilson, S. Cheng

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引用次数: 2

摘要

浮体结构是理想的SOI器件，因为面积效率和寄生减少。最近有人预测，在部分耗尽的SOI器件中存在动态浮体效应，这可能导致器件在开/关时产生瞬态电流。本文给出了由于动态浮体效应而观测到的电流瞬态。分析了其瞬态行为，并进行了器件仿真验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient behaviors in partially depleted thin film SOI devices

The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis.

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1995 IEEE International SOI Conference Proceedings

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