Deep level relaxation spectroscopy and nondestructive testing of potential defects in the semiconductor electronic component base

This article deals with the possibilities of methods of the deep-level transient spectroscopy in semiconductors and the reasons constraining their application for industrial control of potential defects of the semiconductor electronic component base. Among the reasons there are an ambiguous interpretation of the results of indirect measurements, the lack of the domestic regulatory base and software and hardware tools, a variety of algorithms and techniques of measurements and processing of results. Models of hardware transformations of weak relaxation responses of microelectronic barrier structures are proposed. The methodology and results of experimental studies of the characteristics of potential defects of serial semiconductor diodes by the method of frequency-temperature scanning using the developed models are described. The obtained results indicate the possibility of a significant increase in accuracy of measurements of parameters of potential defects. The conclusion is made about the need to organize and perform interlaboratory checking on uniform samples to promote the methods of the deep-level transient spectroscopy in the practice of industrial monitoring.