带场发射阵列的偏转微波放大器

Cha-Mei Tang, Y. Y. Lau, T.A. Swyden
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引用次数: 1

摘要

本文分析了一种新型的微波和毫米波放大器,该放大器基于场发射阵列中具有低电流密度的准直微观电子束的偏转。偏转的概念可以用两种方式应用:作为微电子放大器或束束阴极,为传统放大器配置提供动力,如速调管和行波管。我们发现增益带宽积f/下标T/仅与电子束能量、电流密度和发射度有关,而与电子束宽度和总电流无关。当线电流为20 /spl μ /Aspl μ /m,发射度/spl / epsiv /spl小于/1.4/spl倍/10/sup -6/ mm时,我们发现f/sub / T > 200ghz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deflection microwave amplifier with field emission arrays
We analyze a new class of microwave and millimeter-wave amplifiers, based on the deflection of collimated microscopic electron beams with high-current density and low-voltage from field-emission arrays. The deflection concept may be applied in two ways: as microelectronic amplifiers or as bunched beam cathodes to power conventional amplifier configurations such as Klystrodes and traveling wave tubes. We found that the gain-bandwidth product, f/sub T/, depends only on the electron beam energy, current density and emittance, and is independent of beam width and total current. For line current of 20 /spl mu/Aspl mu/m, emittance /spl epsivsub nspl les/1.4/spl times/10/sup -6/ mm, we find that f/sub T/>200 GHz.<>
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