{"title":"分频器设计采用Λ-type负差分电阻电路","authors":"Dong-Shong Liang, K. Gan, Kuan-Yu Chun","doi":"10.1109/MWSCAS.2010.5548795","DOIUrl":null,"url":null,"abstract":"The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.","PeriodicalId":245322,"journal":{"name":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Frequency divider design using the Λ-type negative-differential-resistance circuit\",\"authors\":\"Dong-Shong Liang, K. Gan, Kuan-Yu Chun\",\"doi\":\"10.1109/MWSCAS.2010.5548795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.\",\"PeriodicalId\":245322,\"journal\":{\"name\":\"2010 53rd IEEE International Midwest Symposium on Circuits and Systems\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-08-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 53rd IEEE International Midwest Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2010.5548795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2010.5548795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Frequency divider design using the Λ-type negative-differential-resistance circuit
The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.
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