Al2O3 ALD温度对Al2O3/GaSb金属-氧化物-半导体界面性能的影响

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562633

M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi

{"title":"Al2O3 ALD温度对Al2O3/GaSb金属-氧化物-半导体界面性能的影响","authors":"M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562633","DOIUrl":null,"url":null,"abstract":"We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties\",\"authors\":\"M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi\",\"doi\":\"10.1109/ICIPRM.2013.6562633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

我们研究了Al2O3原子层沉积(ALD)温度对Al2O3/GaSb金属氧化物半导体(MOS)界面性能的影响。我们发现，随着ALD温度的升高，GaSb MOS接口严重退化。x射线光电子能谱(XPS)测量表明，界面恶化的主要原因是砷化镓表面的锑氧化物的还原。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量